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IRFD1Z2

N-Channel MOSFET

IRFD1Z2 Features

* 0.4A and 0.5A, 60V and 100V

* rDS(ON) = 2.4Ω and 3.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Gu

IRFD1Z2 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can.

IRFD1Z2 Datasheet (57.16 KB)

Preview of IRFD1Z2 PDF

Datasheet Details

Part number:

IRFD1Z2

Manufacturer:

Harris Semiconductor

File Size:

57.16 KB

Description:

N-channel mosfet.

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TAGS

IRFD1Z2 N-Channel MOSFET Harris Semiconductor

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