IRFD1Z3
Harris Semiconductor
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N-channel mosfet. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulator
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IRFD1Z0 - N-Channel MOSFET
(Harris Semiconductor)
Semiconductor
July 1998
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
Features
• 0.4A and.
IRFD1Z0 - FIELD EFFECT POWER TRANSISTOR
(GE)
~[R3D~ [F~lr
FIELD EFFECT POWER TRANSISTOR
IRFD1Z0,1Z1 D82AL29K2
0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 1
This series of N-Channel Enhancement-mod.
IRFD1Z1 - N-Channel MOSFET
(Harris Semiconductor)
Semiconductor
July 1998
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
Features
• 0.4A and.
IRFD1Z1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~[R3D~ [F~lr
FIELD EFFECT POWER TRANSISTOR
IRFD1Z0,1Z1 D82AL29K2
0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 1
This series of N-Channel Enhancement-mod.
IRFD1Z2 - N-Channel MOSFET
(Harris Semiconductor)
Semiconductor
July 1998
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
Features
• 0.4A and.
IRFD1Z2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~·~~U
FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power MOSFET.
IRFD1Z3 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~·~~U
FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power MOSFET.
IRFD110 - Power MOSFET
(Vishay)
.vishay.
IRFD110
Vishay Siliconix
Power MOSFET
D HVMDIP
S G
D
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs.
IRFD110 - N-Channel Power MOSFET
(Intersil Corporation)
IRFD110
Data Sheet July 1999 File Number
2314.3
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field e.
IRFD110 - Power MOSFET
(International Rectifier)
.