Description
Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.
Features
* 0.4A and 0.5A, 60V and 100V
* rDS(ON) = 2.4Ω and 3.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature
- TB334 “Gu
Applications
* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451.
Symbol
D
Ordering
