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IRFD1Z3

N-Channel MOSFET

IRFD1Z3 Features

* 0.4A and 0.5A, 60V and 100V

* rDS(ON) = 2.4Ω and 3.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Gu

IRFD1Z3 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can.

IRFD1Z3 Datasheet (57.16 KB)

Preview of IRFD1Z3 PDF

Datasheet Details

Part number:

IRFD1Z3

Manufacturer:

Harris Semiconductor

File Size:

57.16 KB

Description:

N-channel mosfet.

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TAGS

IRFD1Z3 N-Channel MOSFET Harris Semiconductor

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