IRFD110 Power MOSFET

Vishay

Description

www.vishay.com IRFD110 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRFD110
Manufacturer: Vishay ↗
File Size: 150.82 KB
Datasheet: IRFD110-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* 175 °C Operating Temperature
* Fast switching and ease of paralleling
* Material categorization: for definitions of compliance please see www. vishay

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