* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD121
GE
186.74 KB
Field effect power transistor.
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRFD120,121 D82CL2,K2
1.3 AMPERES 100,60 VOLTS
RDS(ON) = 0.3 n
This series of N-Channel Enhancement-mode Power .
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