IRFD1Z2 Datasheet - GE

IRFD1Z2 FIELD EFFECT POWER TRANSISTOR

~D~ ~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area wit.

IRFD1Z2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD1Z2 Datasheet (184.54 KB)

IRFD1Z2 Datasheet Preview — Preview of IRFD1Z2 PDF

Datasheet Details

Part number:

IRFD1Z2

Manufacturer:

File Size:

184.54 KB

Description:

Field effect power transistor.

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IRFD1Z2 FIELD EFFECT POWER TRANSISTOR GE

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