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IRFD1Z2 - FIELD EFFECT POWER TRANSISTOR

IRFD1Z2 Description

~D~ *~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MO.

IRFD1Z2 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFD1Z2
Manufacturer
GE
File Size
184.54 KB
Datasheet
IRFD1Z2-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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