Datasheet Details
- Part number
- IRFD1Z2
- Manufacturer
- GE
- File Size
- 184.54 KB
- Datasheet
- IRFD1Z2-GE.pdf
- Description
- FIELD EFFECT POWER TRANSISTOR
IRFD1Z2 Description
~D~ *~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MO.
IRFD1Z2 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
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