IRFD1Z2 FIELD EFFECT POWER TRANSISTOR

Description

~D~ *~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MO.

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Datasheet Specifications

Part number: IRFD1Z2
Manufacturer: GE
File Size: 184.54 KB
Datasheet: IRFD1Z2-GE.pdf
Description: FIELD EFFECT POWER TRANSISTOR

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRFD1Z2 Distributors

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IRFD1Z2 FIELD EFFECT POWER TRANSISTOR GE

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