* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD210
GE
179.77 KB
Field effect power transistor.
~~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRFD21 0,211 D82BN2,M2
0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il
This series of N-Channel Enhancement-mode .
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