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IRFD110 - FIELD EFFECT POWER TRANSISTOR

IRFD110 Description

~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power M.

IRFD110 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFD110
Manufacturer
GE
File Size
188.89 KB
Datasheet
IRFD110-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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