IRFF130 Datasheet - GE

IRFF130 FIELD EFFECT POWER TRANSISTOR

~D~[P~ IRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS ROS(ON) = 0.18!l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF130 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF130 Datasheet (193.83 KB)

IRFF130 Datasheet Preview — Preview of IRFF130 PDF

Datasheet Details

Part number:

IRFF130

Manufacturer:

File Size:

193.83 KB

Description:

Field effect power transistor.

📁 Related Datasheet

IRFF130 N-Channel Power MOSFET (Intersil Corporation)

IRFF130 HEXFET TRANSISTORS (International Rectifier)

IRFF131 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF132 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF133 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF110 N-Channel Power MOSFET (Intersil Corporation)

IRFF110 (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)

IRFF110 HEXFET TRANSISTORS (International Rectifier)

TAGS

IRFF130 FIELD EFFECT POWER TRANSISTOR GE

IRFF130 Distributor