BL1N60F N-Channel Power MOSFET

GME

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor .

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Datasheet Specifications

Part number: BL1N60F
Manufacturer: GME
File Size: 213.10 KB
Datasheet: BL1N60F-GME.pdf
Description: N-Channel Power MOSFET

Features

* RDS(ON) =9.3Ω@VGS = 10V. Pb
* Ultra Low gate charge (typical 5.0nC) Lead-free
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB MAXIMUM

BL1N60F Distributors

📁 Related Datasheet

BL1002A BL1005-05A5425B BL1005-05A5425T BL1005-05E2450B BL1005-05E2450T BL1005-05M2450B

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BL1N60F N-Channel Power MOSFET GME

GME BL1N60F-like datasheet