BL1N60F N-Channel Power MOSFET

GME

BL1N60F Description

Production specification N-Channel Enhancement Mode Field Effect Transistor .

BL1N60F Features

* RDS(ON) =9.3Ω@VGS = 10V. Pb
* Ultra Low gate charge (typical 5.0nC) Lead-free
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB MAXIMUM

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Datasheet Details

Part number: BL1N60F
Manufacturer: GME
File Size: 213.10 KB
Datasheet: BL1N60F-GME.pdf
Description: N-Channel Power MOSFET

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N-Channel Power MOSFET GME

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