BL2308

N-Channel Power Mosfet

GME

* RDS(ON)≤270mΩ@VGS=10V. Pb

* RDS(ON)≤340mΩ@VGS=4.5V. Lead-free

* Super high density cell design for extremely low RDS(ON).

* Exceptional on-resistance and maximum DC current capability.

* Electrostatic Sensitive Devices.

* MSL 1 APPLICATIONS

* Power Management i

BL2308

GME

537.61 KB

N-channel power mosfet.

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BL2308 N-Channel Power Mosfet GME

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