BL3415 Datasheet, Mosfet, GME

BL3415 Features

• Mosfet
• Electrostatic Sensitive Devices.
• VDS (V) = -20V
• ID =-4 A
• RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V)

PDF File Details

Part number:

BL3415

Manufacturer:

GME

File Size:

401.93kb

Download:

📄 Datasheet

Description:

Dual p-channel power mosfet.

BL3415 Application

• Applications
• P-channel enhancement mode effect transistor.
• Switching application. ORDERING INFORMATION Type No. Marking BL34

TAGS

BL3415

GME

📁 Related Datasheet

BL34118 - Voice Switched Speakerphone (SHANGHAI BELLING)
.. BL34118 Voice Switched Speakerphone Circuit BL34118 The BL34118 Voice Switched Speakerphone Circuit incorporates the necessary am.

BL34119 - Telephone low voltage audio amplifier circuit (SHANGHAI BELLING)
： BL34119 ， （：） 。（ 2V） ， 80dB， 。 。 8 DIP,SOIC, TSSOP 。 ： *: Vcc=2V~16V *( Icc=2.2mA) * 32Ω， 250mW (Po=250mW at Vcc=6V, RL=32ohm,THD≤10%) * : 8~100.

BL3400 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID .

BL3401 - P-Channel High Density Trench MOSDET (GME)
P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIO.

BL34018 - high quality hands free speakerphone system (SHANGHAI BELLING)
.. BL34018 1. GENERAL DESCRIPTION The BL34018 Speakerphone integrated circuit Incorporates the necessary amplifiers ， attenuators ， .

BL3401L - P-Channel MOSDET (GME)
P-Channel High Density Trench MOSDET FEATURES  Super high dense cell trench design for low RDS(ON).  Rugged and Reliable.  Electrostatic Sensitive.

BL3402 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID .

BL3404 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.8A .

BL3406B - 800mA Synchronous Buck Converter (SHANGHAI BELLING)
BL3406B 1.5 MHz, 800mA Synchronous Buck Converter FEATURES • High Efficiency: Up to 96% • 1.5MHz Constant Switching Frequency • Current Mode Operatio.

BL3407 - P-Channel Power Mosfet (GME)
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = - 30V  I.