BL34118
SHANGHAI BELLING
580.87kb
Voice switched speakerphone. Filter output. Output impedance is less than 50 ohms. Filter input. Input impedance is greater than 1.0 Mohm. Chip Disable. A logic l
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BL34119 - Telephone low voltage audio amplifier circuit
(SHANGHAI BELLING)
:
BL34119 , (:) 。( 2V) , 80dB, 。 。
8 DIP,SOIC, TSSOP 。
:
*: Vcc=2V~16V *( Icc=2.2mA) * 32Ω, 250mW (Po=250mW at Vcc=6V, RL=32ohm,THD≤10%) * : 8~100.
BL3415 - Dual P-Channel Power Mosfet
(GME)
Production specification
Dual P-Channel Enhancement Mode Field Effect Transistor BL3415
FEATURES
Electrostatic Sensitive Devices. VDS (V) = -20V.
BL3400 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3400
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3401 - P-Channel High Density Trench MOSDET
(GME)
P-Channel High Density Trench MOSDET
FEATURES
z Super high dense cell trench design for low RDS(ON).
z Rugged and Reliable.
Pb
Lead-free
APPLICATIO.
BL34018 - high quality hands free speakerphone system
(SHANGHAI BELLING)
..
BL34018
1. GENERAL DESCRIPTION
The BL34018 Speakerphone integrated circuit Incorporates the necessary amplifiers , attenuators , .
BL3401L - P-Channel MOSDET
(GME)
P-Channel High Density Trench MOSDET
FEATURES
Super high dense cell trench design for low RDS(ON).
Rugged and Reliable. Electrostatic Sensitive.
BL3402 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3402
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3404 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.8A .
BL3406B - 800mA Synchronous Buck Converter
(SHANGHAI BELLING)
BL3406B
1.5 MHz, 800mA Synchronous Buck Converter
FEATURES
• High Efficiency: Up to 96% • 1.5MHz Constant Switching Frequency • Current Mode Operatio.
BL3407 - P-Channel Power Mosfet
(GME)
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3407
FEATURES
Electrostatic Sensitive Devices. VDS (V) = - 30V I.