BL34018
SHANGHAI BELLING
598.74kb
High quality hands free speakerphone system. The BL34018 Speakerphone integrated circuit Incorporates the necessary amplifiers , attenuators , and control functions to produce a
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BL3401 - P-Channel High Density Trench MOSDET
(GME)
P-Channel High Density Trench MOSDET
FEATURES
z Super high dense cell trench design for low RDS(ON).
z Rugged and Reliable.
Pb
Lead-free
APPLICATIO.
BL3401L - P-Channel MOSDET
(GME)
P-Channel High Density Trench MOSDET
FEATURES
Super high dense cell trench design for low RDS(ON).
Rugged and Reliable. Electrostatic Sensitive.
BL3400 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3400
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3402 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3402
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3404 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.8A .
BL3406B - 800mA Synchronous Buck Converter
(SHANGHAI BELLING)
BL3406B
1.5 MHz, 800mA Synchronous Buck Converter
FEATURES
• High Efficiency: Up to 96% • 1.5MHz Constant Switching Frequency • Current Mode Operatio.
BL3407 - P-Channel Power Mosfet
(GME)
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3407
FEATURES
Electrostatic Sensitive Devices. VDS (V) = - 30V I.
BL34118 - Voice Switched Speakerphone
(SHANGHAI BELLING)
..
BL34118
Voice Switched Speakerphone Circuit BL34118
The BL34118 Voice Switched Speakerphone Circuit incorporates the necessary am.
BL34119 - Telephone low voltage audio amplifier circuit
(SHANGHAI BELLING)
:
BL34119 , (:) 。( 2V) , 80dB, 。 。
8 DIP,SOIC, TSSOP 。
:
*: Vcc=2V~16V *( Icc=2.2mA) * 32Ω, 250mW (Po=250mW at Vcc=6V, RL=32ohm,THD≤10%) * : 8~100.
BL3415 - Dual P-Channel Power Mosfet
(GME)
Production specification
Dual P-Channel Enhancement Mode Field Effect Transistor BL3415
FEATURES
Electrostatic Sensitive Devices. VDS (V) = -20V.