BL34119
SHANGHAI BELLING
256.99kb
Telephone low voltage audio amplifier circuit.
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BL34118 - Voice Switched Speakerphone
(SHANGHAI BELLING)
..
BL34118
Voice Switched Speakerphone Circuit BL34118
The BL34118 Voice Switched Speakerphone Circuit incorporates the necessary am.
BL3415 - Dual P-Channel Power Mosfet
(GME)
Production specification
Dual P-Channel Enhancement Mode Field Effect Transistor BL3415
FEATURES
Electrostatic Sensitive Devices. VDS (V) = -20V.
BL3400 - N-Channel Power Mosfet
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Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3400
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3401 - P-Channel High Density Trench MOSDET
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P-Channel High Density Trench MOSDET
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z Super high dense cell trench design for low RDS(ON).
z Rugged and Reliable.
Pb
Lead-free
APPLICATIO.
BL34018 - high quality hands free speakerphone system
(SHANGHAI BELLING)
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BL34018
1. GENERAL DESCRIPTION
The BL34018 Speakerphone integrated circuit Incorporates the necessary amplifiers ， attenuators ， .
BL3401L - P-Channel MOSDET
(GME)
P-Channel High Density Trench MOSDET
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Super high dense cell trench design for low RDS(ON).
Rugged and Reliable. Electrostatic Sensitive.
BL3402 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3402
FEATURES
Electrostatic Sensitive Devices. VDS (V) = 30V ID .
BL3404 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor
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Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.8A .
BL3406B - 800mA Synchronous Buck Converter
(SHANGHAI BELLING)
BL3406B
1.5 MHz, 800mA Synchronous Buck Converter
FEATURES
• High Efficiency: Up to 96% • 1.5MHz Constant Switching Frequency • Current Mode Operatio.
BL3407 - P-Channel Power Mosfet
(GME)
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3407
FEATURES
Electrostatic Sensitive Devices. VDS (V) = - 30V I.
