BL3400 Datasheet, Mosfet, GME

BL3400 Features

  • Mosfet
  • Electrostatic Sensitive Devices.
  • VDS (V) = 30V
  • ID = 5.7A(VGS = 10V)
  • RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS

PDF File Details

Part number:

BL3400

Manufacturer:

GME

File Size:

334.67kb

Download:

📄 Datasheet

Description:

N-channel power mosfet.

Datasheet Preview: BL3400 📥 Download PDF (334.67kb)
Page 2 of BL3400 Page 3 of BL3400

BL3400 Application

  • Applications
  • N-channel enhancement mode effect transistor.
  • Switching application. ORDERING INFORMATION Type No. Marking BL34

TAGS

BL3400
N-Channel
Power
Mosfet
GME

📁 Related Datasheet

BL3401 - P-Channel High Density Trench MOSDET (GME)
P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIO.

BL34018 - high quality hands free speakerphone system (SHANGHAI BELLING)
.. BL34018 1. GENERAL DESCRIPTION The BL34018 Speakerphone integrated circuit Incorporates the necessary amplifiers , attenuators , .

BL3401L - P-Channel MOSDET (GME)
P-Channel High Density Trench MOSDET FEATURES  Super high dense cell trench design for low RDS(ON).  Rugged and Reliable.  Electrostatic Sensitive.

BL3402 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3402 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID .

BL3404 - N-Channel Power Mosfet (GME)
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.8A .

BL3406B - 800mA Synchronous Buck Converter (SHANGHAI BELLING)
BL3406B 1.5 MHz, 800mA Synchronous Buck Converter FEATURES • High Efficiency: Up to 96% • 1.5MHz Constant Switching Frequency • Current Mode Operatio.

BL3407 - P-Channel Power Mosfet (GME)
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = - 30V  I.

BL34118 - Voice Switched Speakerphone (SHANGHAI BELLING)
.. BL34118 Voice Switched Speakerphone Circuit BL34118 The BL34118 Voice Switched Speakerphone Circuit incorporates the necessary am.

BL34119 - Telephone low voltage audio amplifier circuit (SHANGHAI BELLING)
: BL34119 , (:) 。( 2V) , 80dB, 。 。 8 DIP,SOIC, TSSOP 。 : *: Vcc=2V~16V *( Icc=2.2mA) * 32Ω, 250mW (Po=250mW at Vcc=6V, RL=32ohm,THD≤10%) * : 8~100.

BL3415 - Dual P-Channel Power Mosfet (GME)
Production specification Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -20V.

Stock and price

Stanley Electric Co
LAMP SUB MINIATURE 14V
DigiKey
T5-WBL-34003A-FA-UT
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts