• Part: S9013
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 239.74 KB
Download S9013 Datasheet PDF
Galaxy Microelectronics
S9013
FEATURES - High Collector Current.(IC= 500m A). - plementary To S9012. - Excellent HFE Linearity. - Power dissipation.(PC=300m W). Pb Lead-free APPLICATIONS - High Collector Current. ORDERING INFORMATION Type No. Marking J3 Production specification SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 5 500 300 -55 to +150 Units V V V m A m W ℃ C082 Rev.A .gmesemi. Production specification NPN Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage...