G2K2P10S2E - Dual P-Channel Enhancement Mode Power MOSFET
G2K2P10S2E Features
* l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram Application l Power switch l DC/DC converters pin assignment Ordering Information Device G2K2P10S2E Pac
