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G2K2P10S2E Datasheet - GOFORD

G2K2P10S2E - Dual P-Channel Enhancement Mode Power MOSFET

G2K2P10S2E Features

* l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram Application l Power switch l DC/DC converters pin assignment Ordering Information Device G2K2P10S2E Pac

G2K2P10S2E-GOFORD.pdf

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Datasheet Details

Part number:

G2K2P10S2E

Manufacturer:

GOFORD

File Size:

589.66 KB

Description:

Dual p-channel enhancement mode power mosfet.

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