G2K2P10S2E - Dual P-Channel Enhancement Mode Power MOSFET

G2K2P10S2E Datasheet Preview — Preview of G2K2P10S2E PDF

Datasheet Details

Part number	G2K2P10S2E
Manufacturer	GOFORD
File Size	589.66 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	G2K2P10S2E-GOFORD.pdf

G2K2P10S2E Product details

Description

D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.G1 G2 General

Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram.

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Published: Nov 13, 2024 |