G2K2P10SE - P-Channel Enhancement Mode Power MOSFET

Datasheet Details

Part number	G2K2P10SE
Manufacturer	GOFORD
File Size	560.65 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G2K2P10SE-GOFORD.pdf

The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ.

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Published: Nov 3, 2024 |