G2K3N10G

N-Channel Enhancement Mode Power MOSFET

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Goford Semiconductor	G2K3N10G	N100V, 2.5A,RD<220M@10V,VTH1V~2V	DigiKey	1093	500 units	$0.12	🛒 Buy Now

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Datasheet Details

Part number:

G2K3N10G

Manufacturer:

GOFORD

File Size:

956.69 KB

Description:

N-channel enhancement mode power mosfet.
G2K3N10G N-Channel Enhancement Mode Power MOSFET Description The G2K3N10G uses advanced trench tec.
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can.

✔ G2K3N10G Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A < 220mΩ < 230mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Ap

✔ G2K3N10G Application

General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A

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G2K3N10G N-Channel Enhancement Mode Power MOSFET GOFORD

Datasheet Details

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Description:

✔ G2K3N10G Features

✔ G2K3N10G Application

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