G2K3N10

N-Channel Enhancement Mode Power MOSFET

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Goford Semiconductor	G2K3N10G	N100V, 2.5A,RD<220M@10V,VTH1V~2V	DigiKey	1093	500 units	$0.12	🛒 Buy Now

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Datasheet Details

Part number:

G2K3N10

Manufacturer:

GOFORD

File Size:

956.69 KB

Description:

N-channel enhancement mode power mosfet.
G2K3N10G N-Channel Enhancement Mode Power MOSFET Description The G2K3N10G uses advanced trench tec.
The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can.

✔ G2K3N10 Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A < 220mΩ < 230mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Ap

✔ G2K3N10 Application

General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 2.5A

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TAGS

G2K3N10 N-Channel Enhancement Mode Power MOSFET GOFORD

G2K3N10 Distributor

Goford Semiconductor

G2K3N10H

N-CH,100V,2A,RD(max) Less Than 220mOhm at 10V,RD(max) Less Than 230mOhm at 4.5V,VTH 1.0V to 2.0V, SOT-223

Verical

80000 In Stock

Qty : 30000 units

Unit Price : $0.06

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