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GT023N10, GT023N10M - N-Channel Enhancement Mode Power MOSFET

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This datasheet PDF includes multiple part numbers: GT023N10, GT023N10M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number GT023N10, GT023N10M
Manufacturer GOFORD
File Size 945.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT023N10M-GOFORD.pdf
Note This datasheet PDF includes multiple part numbers: GT023N10, GT023N10M.
Please refer to the document for exact specifications by model.

GT023N10 Product details

Description

The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

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