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GT023N10M N-Channel Enhancement Mode Power MOSFET

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Description

GT023N10M N-Channel Enhancement Mode Power MOSFET .
The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: GT023N10M
Manufacturer: GOFORD
File Size: 945.12 KB
Datasheet: GT023N10M-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

GT023N10M Distributors

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GT023N10M N-Channel Enhancement Mode Power MOSFET GOFORD

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