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GT023N10M

N-Channel Enhancement Mode Power MOSFET

GT023N10M Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.7mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-263 Ordering Information Device GT023N10M Package TO-263 Marking GT023N10 Packaging 800pcs/Reel Absolute Maximu

GT023N10M Datasheet (945.12 KB)

Preview of GT023N10M PDF

Datasheet Details

Part number:

GT023N10M

Manufacturer:

GOFORD

File Size:

945.12 KB

Description:

N-channel enhancement mode power mosfet.

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GT023N10M N-Channel Enhancement Mode Power MOSFET GOFORD

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