Datasheet4U.com

GT025N06AD5 - N-Channel Enhancement Mode Power MOSFET

📥 Download Datasheet

GT025N06AD5 Datasheet Preview — Preview of GT025N06AD5 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GT025N06AD5
Manufacturer	GOFORD
File Size	0.99 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT025N06AD5-GOFORD.pdf

GT025N06AD5 Product details

Description

The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2mΩ < 2.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram pin assignment.

📁 GT025N06AD5 Similar Datasheet

GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
GT04 - Gate Drive Transformer (ice Components)
GT04-111 - Gate Drive Transformer (ice Components)
GT04-122 - Gate Drive Transformer (ice Components)

Other Datasheets by GOFORD

GT025N06AT - N-Channel Enhancement Mode Power MOSFET
GT025N06 - N-Channel Enhancement Mode Power MOSFET
GT023N10 - N-Channel Enhancement Mode Power MOSFET
GT023N10M - N-Channel Enhancement Mode Power MOSFET
GT007N04 - N-Channel Enhancement Mode Power MOSFET
GT007N04TL - N-Channel Enhancement Mode Power MOSFET

Published: Nov 13, 2024 |