GT080N10 - N-Channel Enhancement Mode Power MOSFET
GT080N10 Features
* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 65A < 8mΩ < 9.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device GT080N10K Package TO-252 Marking GT080N10 TO-252 Packagin
