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GT080N10

N-Channel Enhancement Mode Power MOSFET

GT080N10 Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 65A < 8mΩ < 9.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device GT080N10K Package TO-252 Marking GT080N10 TO-252 Packagin

GT080N10 Datasheet (640.99 KB)

Preview of GT080N10 PDF

Datasheet Details

Part number:

GT080N10

Manufacturer:

GOFORD

File Size:

640.99 KB

Description:

N-channel enhancement mode power mosfet.

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GT080N10 N-Channel Enhancement Mode Power MOSFET GOFORD

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