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GT088N06T

N-Channel Enhancement Mode Power MOSFET

GT088N06T Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested 60V 60A < 9m Ω < 13 m Ω

* RoHS Compliant Application

* Synchronous Rectification in SMPS or LED Driver

* UPS

* Motor Control

* BMS

* High Frequency Cir

GT088N06T Datasheet (521.52 KB)

Preview of GT088N06T PDF

Datasheet Details

Part number:

GT088N06T

Manufacturer:

GOFORD

File Size:

521.52 KB

Description:

N-channel enhancement mode power mosfet.

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TAGS

GT088N06T N-Channel Enhancement Mode Power MOSFET GOFORD

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