GT088N06T N-Channel Enhancement Mode Power MOSFET

Description

GOFORD GT088N06T N-Channel Enhancement Mode Power MOSFET .
The GT088N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: GT088N06T
Manufacturer: GOFORD
File Size: 521.52 KB
Datasheet: GT088N06T-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested 60V 60A < 9m Ω < 13 m Ω

GT088N06T Distributors

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GT088N06T N-Channel Enhancement Mode Power MOSFET GOFORD

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