GT088N06, GT088N06T Datasheet - GOFORD

GT088N06 N-Channel Enhancement Mode Power MOSFET

GT088N06 Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested 60V 60A < 9m Ω < 13 m Ω

* RoHS Compliant Application

* Synchronous Rectification in SMPS or LED Driver

* UPS

* Motor Control

* BMS

* High Frequency Cir

Datasheet Details

GT088N06, GT088N06T

GOFORD

521.52 KB

N-channel enhancement mode power mosfet.

This datasheet PDF includes multiple part numbers: GT088N06, GT088N06T.
Please refer to the document for exact specifications by model.

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