GT088N06, GT088N06T N-Channel Enhancement Mode Power MOSFET

Description

GOFORD GT088N06T N-Channel Enhancement Mode Power MOSFET .
The GT088N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

GT088N06 Datasheet Preview — This datasheet PDF includes multiple part numbers: GT088N06, GT088N06T. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GT088N06, GT088N06T
Manufacturer: GOFORD
File Size: 521.52 KB
Datasheet: GT088N06T-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET
Note: This datasheet PDF includes multiple part numbers: GT088N06, GT088N06T.
Please refer to the document for exact specifications by model.

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested 60V 60A < 9m Ω < 13 m Ω

GT088N06 Distributors

📁 Related Datasheet

GT0001 GT0002 GT02F16 GT04 GT04-111 GT04-122

📌 All Tags

GT088N06T N-Channel Enhancement Mode Power MOSFET GOFORD

GOFORD GT088N06-like datasheet