GS8161E18D - 18Mb SyncBurst SRAMs

GSI Technology

GS8161E18D Datasheet Preview — Preview of GS8161E18D PDF

Datasheet Details

Part number	GS8161E18D
Manufacturer	GSI Technology
File Size	1.19 MB
Description	18Mb SyncBurst SRAMs
Datasheet	GS8161E18D-GSITechnology.pdf

GS8161E18D Product details

Description

Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

FT pin for user-configurable flow through or pipeline operation.
Dual Cycle Deselect (DCD) operation.
IEEE 1149.1 JTAG-compatible Boundary Scan.
2.5 V or 3.3 V +10%/.
10% core power supply.
2.5 V or 3.3 V I/O supply.
LBO pin for Linear or Interleaved Burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipeline mode.
Byte Write (BW) and/or Global Write (GW) opera.

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Other Datasheets by GSI Technology

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Published: Jun 20, 2024 |