Part number:
G2N3906
Manufacturer:
GTM
File Size:
226.23 KB
Description:
Pnp epitaxial planar transistor.
* The G2N3906 is designed for general purpose switching and amplifier applications.
* Pb-free package are available
* Collector-Emitter Voltage: VCEO=-40V
* Collect Dissipation: Pc (max) =625mW
* Complementary to G2N3904 ISSUED DATE :2004/08/31 REVISED DATE :2005/06/24C P N P E P I TA X
G2N3906
GTM
226.23 KB
Pnp epitaxial planar transistor.
📁 Related Datasheet
G2N3904 - NPN TRANSISTOR
(GTM)
..
CORPORATION
Description Features
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
G2N3904
N P N E P I TA X I A L P L A N A R .
G2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4401
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B.
G2N4403 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4403
Description Features
P NP EP ITAXI AL P L ANAR TANSI STOR
The G2N4403 is designed for general purpose switchi.
G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5401
Description Features
P NP EP ITAX I AL PL ANAR TANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
.
G2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5551
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B.
G2N65 - 650V N-Channel MOSFET
(GOFORD)
GOFORD
650V N-Channel MOSFET
Features
@ 10V (Typ)
650V
4Ω
2A
Fast switching 100% avalanche tested Improved dv/dt capability RoHS Complia.
G2N7000 - N-CHANNEL ENHANCEMENT MODE MOSFET
(GTM)
..
ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
The G2N7000 is designed.
G2N7002 - N-CHANNELTRANSISTOR
(GTM)
G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2..
