G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR
G2N5401 Features
* P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages.
* Complementary to NPN Type G2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimen
