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G2N5401 PNP EPITAXIAL PLANAR TRANSISTOR

G2N5401 Description

www.DataSheet4U.com CORPORATION G2N5401 .
Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applicat.

G2N5401 Applications

* requiring high breakdown voltages.
* Complementary to NPN Type G2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51

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Datasheet Details

Part number
G2N5401
Manufacturer
GTM
File Size
173.58 KB
Datasheet
G2N5401_GTM.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR

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PNP EPITAXIAL PLANAR TRANSISTOR GTM
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