Part number:
G2N65
Manufacturer:
GOFORD
File Size:
3.06 MB
Description:
650v n-channel mosfet.
* @ 10V (Typ) 650V 4Ω 2A
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS Compliant Package G2N65 Application
* Switch Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Power Factor Correction (PFC) Ordering Information Part N
G2N65
GOFORD
3.06 MB
650v n-channel mosfet.
📁 Related Datasheet
G2N3904 - NPN TRANSISTOR
(GTM)
..
CORPORATION
Description Features
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
G2N3904
N P N E P I TA X I A L P L A N A R .
G2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N3906
Description Features
The G2N3906 is designed for general purpose switching and amplifier applications. *Pb-fr.
G2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4401
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B.
G2N4403 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4403
Description Features
P NP EP ITAXI AL P L ANAR TANSI STOR
The G2N4403 is designed for general purpose switchi.
G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5401
Description Features
P NP EP ITAX I AL PL ANAR TANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
.
G2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5551
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B.
G2N7000 - N-CHANNEL ENHANCEMENT MODE MOSFET
(GTM)
..
ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
The G2N7000 is designed.
G2N7002 - N-CHANNELTRANSISTOR
(GTM)
G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2..
