G2N7000
GTM
214.71kb
N-channel enhancement mode mosfet. N-CHANNEL ENHANCEMENT MODE MOSFET The G2N7000 is designed for high voltage, high speed applications such as switching regulators, c
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📁 Related Datasheet
G2N7002 - N-CHANNELTRANSISTOR
(GTM)
G2N7002
Description Package Dimensions
1/3 N-CHANNEL TRANSISTOR
N-channel enhancement-mode MOS TRANSISTOR
REF. A B C D E F
Millimeter Min. Max. 2..
G2N7002K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B
G2N7002K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDS.
G2N3904 - NPN TRANSISTOR
(GTM)
..
CORPORATION
Description Features
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
G2N3904
N P N E P I TA X I A L P L A N A R .
G2N3906 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N3906
Description Features
The G2N3906 is designed for general purpose switching and amplifier applications. *Pb-fr.
G2N4401 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4401
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B.
G2N4403 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N4403
Description Features
P NP EP ITAXI AL P L ANAR TANSI STOR
The G2N4403 is designed for general purpose switchi.
G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5401
Description Features
P NP EP ITAX I AL PL ANAR TANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B
.
G2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
G2N5551
Description Features
NP N E PITAX I AL PLANAR T RANSI STOR
ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B.
G2N65 - 650V N-Channel MOSFET
(GOFORD)
GOFORD
650V N-Channel MOSFET
Features
@ 10V (Typ)
650V
4Ω
2A
Fast switching 100% avalanche tested Improved dv/dt capability RoHS Complia.
G2-1A02 - (G2 Series) Soild State Relays
(Crydom)
..
G2 Series/ 1 FORM A
Solid State Relays
Model Number Parameters Input Characteristics
LED Forward Current - Turn on LED Forward C.
