Datasheet Specifications
- Part number
- GE02N60
- Manufacturer
- GTM
- File Size
- 281.35 KB
- Datasheet
- GE02N60_GTM.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.Features
* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-SourceApplications
* The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment.GE02N60 Distributors
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