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GE02N60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE02N60 Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source

GE02N60 General Description

The GE02N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment.
*Dynamic dv/dt Rating
*Sim.

GE02N60 Datasheet (281.35 KB)

Preview of GE02N60 PDF

Datasheet Details

Part number:

GE02N60

Manufacturer:

GTM

File Size:

281.35 KB

Description:

N-channel enhancement mode power mosfet.
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.

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GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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