GE02N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

GE02N60 Datasheet Preview — Preview of GE02N60 PDF

Datasheet Details

Part number	GE02N60
Manufacturer	GTM
File Size	281.35 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GE02N60_GTM.pdf

GE02N60 Product details

Description

The GE02N60 provide the designer with the best combination of fast switching. Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

Features

Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±20 2 1.26 6 3.

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Published: Sep 22, 2007 |