GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
The GE02N60 provide the designer with the best combination of fast switching.

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Datasheet Specifications

Part number: GE02N60
Manufacturer: GTM
File Size: 281.35 KB
Datasheet: GE02N60_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source

Applications

* The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment.
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated

GE02N60 Distributors

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GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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