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GE04N70B Datasheet - GTM

GE04N70B N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650/700V 2.4 4A The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO.

GE04N70B Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source

GE04N70B Datasheet (314.60 KB)

Preview of GE04N70B PDF
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Datasheet Details

Part number:

GE04N70B

Manufacturer:

GTM

File Size:

314.60 KB

Description:

N-channel enhancement mode power mosfet.

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Stock and price

part
ROHM Semiconductor
BU4826G-TR
0 In Stock
Qty : 30000 units
Unit Price : $0.16

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GE04N70B N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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