GE07N70C-A Datasheet, Mosfet, GTM

GE07N70C-A Features

  • Mosfet Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25

PDF File Details

Part number:

GE07N70C-A

Manufacturer:

GTM

File Size:

386.53kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3

Datasheet Preview: GE07N70C-A 📥 Download PDF (386.53kb)
Page 2 of GE07N70C-A Page 3 of GE07N70C-A

GE07N70C-A Application

  • Applications TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of

TAGS

GE07N70C-A
N-CHANNEL
ENHANCEMENT
MODE
POWER
MOSFET
GTM

📁 Related Datasheet

GE01N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE : GE01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.

GE02N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.

GE03N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE03N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/70.

GE04N70B - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) I.

GE06MPS06E - Silicon Carbide Schottky Diode (GeneSiC)
GE06MPS06E 650V 6A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .

GE08MPS06A - Silicon Carbide Schottky Diode (GeneSiC)
GE08MPS06A 650V 8A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .

GE08MPS06E - Silicon Carbide Schottky Diode (GeneSiC)
GE08MPS06E 650V 8A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .

GE08P20 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.

GE09N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : GE09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/70.

GE-G24064A-YYH-VZ - LCD (Gleichmann)
Gleichmann & Co. Electronics GmbH Industriestrasse 16 76297 Stutensee-Spöck / Germany SPECIFICATION CUSTOMER : MODULE NO.: GE- G24064A-YYH-VZ/R APPRO.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts