Datasheet Specifications
- Part number
- GE03N70
- Manufacturer
- GTM
- File Size
- 316.12 KB
- Datasheet
- GE03N70_GTM.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE03N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/70.
Features
* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-SourceApplications
* TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suiteGE03N70 Distributors
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