Part number:
GE08MPS06E
Manufacturer:
GeneSiC
File Size:
508.01 KB
Description:
Silicon carbide schottky diode.
GE08MPS06E Datasheet (508.01 KB)
* Gen5 Thin Chip Technology for Low VF
* Low Conduction Losses for All Load Conditions
* Superior Figure of Merit QC/IF
* Enhanced Surge Current Robustness
* Low Thermal Resistance
* Temperature Independent Fast Switching
* Positive Temperature
GE08MPS06E Datasheet (508.01 KB)
GE08MPS06E
GeneSiC
508.01 KB
Silicon carbide schottky diode.
📁 Related Datasheet
GE08MPS06A - Silicon Carbide Schottky Diode
(GeneSiC)
GE08MPS06A 650V 8A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .
GE08P20 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2006/01/19 REVISED DATE :
GE08P20
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID.
GE01N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/01/27 REVISED DATE :
GE01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID.
GE02N60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B
GE02N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS.
GE03N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/01/04 REVISED DATE :
GE03N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS 600/650/70.
GE04N70B - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/01/04 REVISED DATE :
GE04N70B
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) I.
GE06MPS06E - Silicon Carbide Schottky Diode
(GeneSiC)
GE06MPS06E 650V 6A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .
GE07N70C-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(GTM)
..
Pb Free Plating Product
ISSUED DATE :2005/03/03 REVISED DATE :
GE07N70C-A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON).
