GSS9980 POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9980 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.
Features. High Breakdown Voltage. Low Gate Change. Single Drive Requirement Package Dimensions REF.

📥 Download Datasheet

GSS9980 Datasheet Preview — Preview of GSS9980 PDF

Datasheet Specifications

Part number: GSS9980
Manufacturer: GTM
File Size: 317.12 KB
Datasheet: GSS9980_GTM.pdf
Description: POWER MOSFET

Features

* High Breakdown Voltage
* Low Gate Change
* Single Drive Requirement Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GSS9980 Distributors

📁 Related Datasheet

GSS-141N GSS-181N GSS-201M GSS-251M GSS-301M GSS-401M

📌 All Tags

GSS9980 POWER MOSFET GTM

GTM GSS9980-like datasheet