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TBL170N10TD - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: TO-252.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL170N10TD Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Marki.

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Datasheet Details

Part number TBL170N10TD
Manufacturer Galaxy Microelectronics
File Size 540.67 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TBL170N10TD Datasheet
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Full PDF Text Transcription

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N-Channel Enhancement Mode MOSFET TBL170N10TD Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: TO-252  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL170N10TD Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Marking Code 170N10TD Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) *5 Continuous Drain Current (TC = 100°C) *5 Continuous Drain Current (TA = 25°C) Continuous Drain Current (
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