TBL170N10TD Datasheet - Galaxy Microelectronics

TBL170N10TD - N-Channel Enhancement Mode MOSFET

TBL170N10TD Features

* Low RDS(ON) & FOM

* Extremely low switching loss

* Excellent stability and uniformity

* Halogen free

* Qualified to AEC-Q101 standards for high reliability Mechanical Data

* Case: TO-252

* Molding Compound: UL Flammability Classification Rating 94V-0

* Terminals: M

Datasheet Details

TBL170N10TD

Galaxy Microelectronics

540.67 KB

N-channel enhancement mode mosfet.

TBL170N10TD Distributor

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