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TBL950P10D - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Super low gate charge.
  • 100% EAS guaranteed.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: TO-252.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL950P10D Package TO-252 Shipping Quantity 80.

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Datasheet Details

Part number TBL950P10D
Manufacturer Galaxy Microelectronics
File Size 507.67 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TBL950P10D Datasheet
Additional preview pages of the TBL950P10D datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode MOSFET TBL950P10D Features  Super low gate charge  100% EAS guaranteed  Excellent CdV/dt effect decline  Advanced high cell density Trench technology  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: TO-252  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL950P10D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 950P10D Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) *1 Continuous Drain Current (TC = 100°C) *1 Pulsed Drain Current *2 Si
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