TBL950P10D Datasheet - Galaxy Microelectronics

TBL950P10D P-Channel Enhancement Mode MOSFET

TBL950P10D Features

* Super low gate charge

* 100% EAS guaranteed

* Excellent CdV/dt effect decline

* Advanced high cell density Trench technology

* Halogen free

* Qualified to AEC-Q101 standards for high reliability Mechanical Data

* Case: TO-252

* Molding Compound: UL Flammability Cla

Datasheet Details

TBL950P10D

Galaxy Microelectronics

507.67 KB

P-channel enhancement mode mosfet.

TBL950P10D Distributor

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