TBL950P10D P-Channel Enhancement Mode MOSFET

Galaxy Microelectronics

Description

P-Channel Enhancement Mode MOSFET TBL950P10D .

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Datasheet Specifications

Part number: TBL950P10D
Manufacturer: Galaxy Microelectronics
File Size: 507.67 KB
Datasheet: TBL950P10D-GalaxyMicroelectronics.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* Super low gate charge
* 100% EAS guaranteed
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology
* Halogen free
* Qualified to AEC-Q101 standards for high reliability Mechanical Data
* Case: TO-252
* Molding Compound: UL Flammability Cla

Applications

* , should be limited by total power dissipation MTM0797A: October 2020 www. gmesemi. com 2 P-Channel Enhancement Mode MOSFET TBL950P10D Ratings and Characteristics Curves (@ TA = 25°C unless otherwise specified) MTM0797A: October 2020 www. gmesemi. com 3 P-Channel Enhancement Mode MOSFET TBL950P1

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TBL950P10D P-Channel Enhancement Mode MOSFET Galaxy Microelectronics

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