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1N1124AR - Silicon Standard Recovery Diode

This page provides the datasheet information for the 1N1124AR, a member of the 1N1199A Silicon Standard Recovery Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 50 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continu.

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Datasheet preview – 1N1124AR

Datasheet Details

Part number 1N1124AR
Manufacturer GeneSiC
File Size 735.07 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1124AR Datasheet
Additional preview pages of the 1N1124AR datasheet.

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Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 12 12 12 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
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