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G3R40MT12D Silicon Carbide MOSFET

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Description

G3R40MT12D 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

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Datasheet Specifications

Part number
G3R40MT12D
Manufacturer
GeneSiC
File Size
3.01 MB
Datasheet
G3R40MT12D-GeneSiC.pdf
Description
Silicon Carbide MOSFET

Features

* G3R™ (3rd Generation) Technology
* Low Temperature Coefficient of RDS(ON)
* Lower QG and Smaller RG(INT)
* Low Device Capacitances (COSS, CRSS)
* LoRing™ - Electromagnetically Optimized Design
* Superior Cost-Performance Index
* Robust Body D

Applications

* Solar Inverters
* EV/HEV Charging
* Motor Drives
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* UPS
* Smart Grid Transmission and Distribution
* Induction Heating and Welding Absolute Maximum Ratings (At TC = 25°C U

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