Part number:
MBR600100CT
Manufacturer:
GeneSiC
File Size:
461.66 KB
Description:
Silicon power schottky diode.
* High Surge Capability
* Types from 45 V to 100 V VRRM
* Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Co
MBR600100CT Datasheet (461.66 KB)
MBR600100CT
GeneSiC
461.66 KB
Silicon power schottky diode.
📁 Related Datasheet
MBR600100CT Schottky Power Diode (Naina Semiconductor)
MBR600100CT Silicon Power Schottky Diode (America Semiconductor)
MBR600100CTR Schottky Power Diode (Naina Semiconductor)
MBR600100CTR Silicon Power Schottky Diode (America Semiconductor)
MBR600100CTR Silicon Power Schottky Diode (GeneSiC)
MBR60020CT SCHOTTKY DIODES (TRANSYS)
MBR60020CT Schottky Power Diode (Naina Semiconductor)
MBR60020CT Silicon Power Schottky Diode (America Semiconductor)
MBR60020CT Silicon Power Schottky Diode (GeneSiC)
MBR60020CTR SCHOTTKY DIODES (TRANSYS)