GSM2120Y Datasheet - Globaltech

GSM2120Y N+P Dual-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

GSM2120Y Features

* N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V

* P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V

* Fast switching

* Suit for 1.5V/-1.5V Gate Drive Applications

* Green Device Available

* SOT-563 package design Applications

* Notebook

* Lo

GSM2120Y-Globaltech.pdf

GSM2120Y Datasheet Preview — Preview of GSM2120Y PDF

Datasheet Details

Part number:

GSM2120Y

Manufacturer:

Globaltech

File Size:

810.79 KB

Description:

N+p dual-channel mosfet.

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GSM2120Y GSM2120Y N +P Dual-Channel MOSFET Globaltech

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