GSM2120Y - N+P Dual-Channel MOSFET
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod
GSM2120Y Features
* N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V
* Fast switching
* Suit for 1.5V/-1.5V Gate Drive Applications
* Green Device Available
* SOT-563 package design Applications
* Notebook
* Lo
