GSM2120Y N+P Dual-Channel MOSFET

Globaltech

Description

GSM2120Y 20V N+P Dual Channel MOSFETs Product .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: GSM2120Y
Manufacturer: Globaltech
File Size: 810.79 KB
Datasheet: GSM2120Y-Globaltech.pdf
Description: N+P Dual-Channel MOSFET

Features

* N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V
* Fast switching

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GSM2120Y N +P Dual-Channel MOSFET Globaltech

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