GSM2219Y Datasheet - Globaltech

GSM2219Y Dual P-Channel MOSFET

These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSM2219Y Features

* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V

* Fast switching

* Suit for -1.5V Gate Drive Applications

* Green Device Available

* SOT-563 package design Applications

* Notebook

* Load Switch

* Networking

* Hand-Held Instruments Top

GSM2219Y Datasheet (536.15 KB)

GSM2219Y Datasheet Preview — Preview of GSM2219Y PDF

Datasheet Details

Part number:

GSM2219Y

Manufacturer:

Globaltech

File Size:

536.15 KB

Description:

Dual p-channel mosfet.

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