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GSM2165JZF Datasheet - Globaltech

GSM2165JZF 20V P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2165JZF Features

* -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Hand-held Instruments

* Packages & Pin Assignm

GSM2165JZF Datasheet (374.76 KB)

GSM2165JZF Datasheet Preview — Preview of GSM2165JZF PDF

Datasheet Details

Part number:

GSM2165JZF

Manufacturer:

Globaltech

File Size:

374.76 KB

Description:

20v p-channel mosfets.

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GSM2165JZF 20V P-Channel MOSFETs Globaltech

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