GSM2220Y Datasheet - Globaltech

GSM2220Y Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSM2220Y Features

* 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V

* Fast switching

* Suit for 1.5V Gate Drive Applications

* Green Device Available

* SOT-563 package design Applications

* Notebook

* Load Switch

* Networking

* Hand-Held Instruments Top View

GSM2220Y Datasheet (498.55 KB)

GSM2220Y Datasheet Preview — Preview of GSM2220Y PDF

Datasheet Details

Part number:

GSM2220Y

Manufacturer:

Globaltech

File Size:

498.55 KB

Description:

Dual n-channel mosfet.

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GSM2220Y Dual N-Channel MOSFET Globaltech

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