GSM2220Y - Dual N-Channel MOSFET
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
GSM2220Y Features
* 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V
* Fast switching
* Suit for 1.5V Gate Drive Applications
* Green Device Available
* SOT-563 package design Applications
* Notebook
* Load Switch
* Networking
* Hand-Held Instruments Top View
