GSM2151E Datasheet - Globaltech

GSM2151E 25V P-Channel Enhancement Mode MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2151E Features

* -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* G-S ESD Protection Diode Embedded

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instrume

GSM2151E Datasheet (558.26 KB)

GSM2151E Datasheet Preview — Preview of GSM2151E PDF

Datasheet Details

Part number:

GSM2151E

Manufacturer:

Globaltech

File Size:

558.26 KB

Description:

25v p-channel enhancement mode mosfet.

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GSM2151E 25V P-Channel Enhancement Mode MOSFET Globaltech

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