GSM2151E - 25V P-Channel Enhancement Mode MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM2151E Features
* -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V
* Fast switching
* Suit for -4.5V Gate Drive Applications
* G-S ESD Protection Diode Embedded
* Green Device Available
* SOT-23 package design Applications
* Notebook
* Load Switch
* Battery Protection
* Hand-held Instrume
