GSM2519 Datasheet (Globaltech)

GSM2519, MOSFET

GSM2519, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Packages & Pi

GSM2519 Features

* N-Channel 20V/4.5A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=80mΩ@VGS=1.8V

* P-Channel -20V/-4.5A,RDS(ON)=90mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=130mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=190mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS