GSMDC3812V Datasheet - Globaltech

GSMDC3812V - Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDC3812V Features

* 30V, 20A, RDS(ON)=20mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN3X3-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* L

GSMDC3812V-Globaltech.pdf