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GSMDC3812V - Dual N-Channel MOSFET

GSMDC3812V Description

GSMDC3812V 30V Dual N-Channel MOSFETs Product .
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

GSMDC3812V Features

* 30V, 20A, RDS(ON)=20mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available

📥 Download Datasheet

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Datasheet Details

Part number
GSMDC3812V
Manufacturer
Globaltech
File Size
516.32 KB
Datasheet
GSMDC3812V-Globaltech.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Globaltech
Globaltech GSMDC3812V-like datasheet

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