GSMDD4906 Datasheet (Globaltech)

GSMDD4906, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDD4906 Features

* 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* TO-252-2L package design Applications

* Notebook

* Load Switch

* LED Applications

* Hand-Held Device Packages & Pin Assig