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GSMDD4906

N-Channel MOSFET

GSMDD4906 Features

* 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* TO-252-2L package design Applications

* Notebook

* Load Switch

* LED Applications

* Hand-Held Device Packages & Pin Assig

GSMDD4906 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDD4906 Datasheet (490.48 KB)

Preview of GSMDD4906 PDF

Datasheet Details

Part number:

GSMDD4906

Manufacturer:

Globaltech

File Size:

490.48 KB

Description:

N-channel mosfet.

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TAGS

GSMDD4906 N-Channel MOSFET Globaltech

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